| Quantity | Unit price |
|---|---|
| 1–29 | $12.94 |
| 30–59 | $7.9805 |
| 60–119 | $7.3914 |
| 120–509 | $6.8963 |
| 510+ | $6.4418 |
Need more than the quantities above? Request a bulk quote
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A 1200 V CoolSiC trench MOSFET in a TO-247-3 package with 30 mΩ typical on-resistance. Silicon carbide switching lowers losses in EV chargers, solar inverters and industrial power supplies compared with silicon IGBTs.
| VDSS | 1200 V |
|---|---|
| RDS(on) typ | 30 mΩ (VGS = 18 V) |
| ID (25 °C) | 56 A |
| Technology | CoolSiC MOSFET M1H |
| Package | TO-247-3 |
| Gate drive | Recommended +15 to +18 V / 0 V |
Specifications are summarized from manufacturer and listing information; confirm against the manufacturer datasheet before purchase.
Manufacturer datasheet / product page (opens the manufacturer's website)
1200 V, 20 mΩ, CoolSiC M1H, TO-247-4 with Kelvin source
1200 V, 22 mΩ, M3S EliteSiC, TO-247-4L
1200 V, 16 mΩ, 115 A, C3M, TO-247-4
900 V, 65 mΩ, 36 A, C3M, TO-247-3
