Samsung HBM3E 12-High 36GB (Shinebolt)
HBM3E, 12-high stack, 36 GB, up to 9.8 Gbps per pin
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Micron HBM3E 12-high is a High Bandwidth Memory stack with 36 GB of capacity per stack. Micron specifies pin speeds greater than 9.2 Gbps and bandwidth greater than 1.2 TB/s per stack over a 1024-bit interface, and highlights lower power per bit as a key design goal for this generation.
HBM is integrated beside AI accelerators and HPC processors on 2.5D packages by the chip and package makers, so it is bought by those manufacturers rather than by system builders. Micron supplies HBM under allocation and there is no public catalog price. This item is quoted on request only; send your quantity, application and delivery country.
| Memory type | HBM3E |
|---|---|
| Stack height | 12-high |
| Capacity per stack | 36 GB |
| Pin speed | Greater than 9.2 Gbps (Micron spec) |
| Bandwidth per stack | Greater than 1.2 TB/s (Micron spec) |
| Interface | 1024-bit |
Specifications are summarized from manufacturer and listing information; confirm against the manufacturer datasheet before purchase.
Manufacturer datasheet / product page (opens the manufacturer's website)
HBM3E, 12-high stack, 36 GB, up to 9.8 Gbps per pin
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